极大3限制边连通二部图的充分条件

设G=(V,E)是一个连通图.称一个边集合S■E是一个k限制边割,如果G-S的每个连通分支至少有k个顶点.称G的所有k限制边割中所含边数最少的边割的基数为G的k限制边连通度,记为λ_k(G).定义ξ_k(G)=min{[X,■]:|X|=k,G[X]连通,■=V(G)\X}.称图G是极大k限制边连通的,如果λ_k(G)=ξ_k(G).本文给出了围长为g>6的极大3限制边连通二部图的充分条件.     

概率语言多属性群决策方法及其在新型智慧城市市民获得感评价中的应用

针对公众参与的语言信息多属性群决策问题，研究了考虑参与者满意度的概率语言多属性群决策方法。首先，根据参与者的语言评价信息确定并规范化概率语言决策矩阵。然后，对大群体进行共识分析，由最大化参与者群体的满意度构建线性规划模型，确定参与者群组的权重；构造正、负理想方案的评价向量，构建多目标规划模型，用拉格朗日乘子法求解属性权重；定义各方案的加权贴近度，并以此对方案进行排序和优选。最后，通过新型智慧城市市民获得感评价案例验证了模型的可行性和有效性。     

Macroscopic Polarization Change of Mononuclear Valence Tautomeric Cobalt Complexes Through the Use of Enantiopure Ligand

The crystallization of a complex having electron transfer properties in a polar space group can induce the polarization switching of a crystal in a specific direction, which is attractive for the development of sensors, memory devices, and capacitors. Unfortunately, the probability of crystallization in a polar space group is usually low. Noticing that enantiopure compounds crystallize in Sohncke space groups, this paper reports a strategy for the molecular design of non-ferroelectric polarization switching crystals based on the use of intramolecular electron transfer and chirality. In addition, this paper describes the synthesis of a mononuclear valence tautomeric (VT) cobalt complex bearing an enantiopure ligand. The introduction of enantiomer enables the crystallization of the complex in the polar space group (P2₁). The polarization of the crystals along the b-axis direction is not canceled out and the VT transition is accompanied by a change in the macroscopic polarization of the polar crystal. Polarization switching via electron transfer is realized at around room temperature.     

On generalized perfect difference sets constructed from Sidon sets

Let $\mathbb{N}$ be the set of positive integers. For a nonempty set A of integers and every integer u, denote by $d_A(u)$ the number of $(a,a^{\prime })$ with $a,a^{\prime }\in A$ such that $u=a-a^{\prime }$. For a sequence S of positive integers, let $S(x)$ be the counting function of S. The set $A\subseteq \mathbb{N}$ is called a perfect difference set if $d_A(u)=1$ for every positive integer u. In 2008, Cilleruelo and Nathanson (2008) [4] constructed dense perfect difference sets from dense Sidon sets. In this paper, as a main result, we prove that: let $f:\mathbb{N}\to \mathbb{N}$ be an increasing function satisfying $f(n)\ge 2$ for any positive integer n, then for every Sidon set B and every function $\omega (x)\to \infty$, there exists a set $A\subseteq \mathbb{N}$ such that $d_A(u)=f(u)$ for every positive integer u and $B(x/3)-\omega (x)\le A(x)\le B(x/3)+\omega (x)$ for all $x\ge C_{f,B,\omega }$.     

Topological entropy of continuous self-maps on closed surfaces

The objective of this work is to present sufficient conditions for having positive topological entropy for continuous self-maps defined on a closed surface by using the action of this map on the homological groups of the closed surface.